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Photo-Leakage Current of Zinc Oxide Thin-Film Transistors

Photo-Leakage Current of Zinc Oxide Thin-Film Transistors,10.1143/JJAP.49.03CB03,Japanese Journal of Applied Physics,Yudai Kamada,Shizuo Fujita,Takahi

Photo-Leakage Current of Zinc Oxide Thin-Film Transistors   (Citations: 2)
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The origin of photo-leakage current of zinc oxide thin-film transistors (ZnO TFTs) under light irradiation was investigated using a light shield technique. The irradiation position dependence revealed that the effect of light irradiation is much stronger near the source region in the channel than near the drain region. This can be explained by the enhanced carrier injection from the source electrode. The irradiation near the drain region, on the other hand, simply induced photocurrent, which is much smaller than the carrier injection on the source side. Therefore, completely transparent ZnO TFTs under visible light irradiation will be obtained, if the carrier injection from the source electrode is successfully suppressed.
Journal: Japanese Journal of Applied Physics , vol. 49, no. 3, 2010
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    • ...Photo-leakage current and electrical instability under blue-light irradiation, for example, are the undesirable phenomena [12]‐[14] that needs to be resolved by careful consideration of their underlying mechanism...
    • ...We reported previously on the basis of experimental results of irradiation-position dependence in ZnO TFTs, that significant photo-leakage current in ZnO TFTs was generated when the source region was irradiated and that photo-leakage current generated under the source region irradiation was strongly dependent on the applied drain voltage [12]...
    • ...tively. The detailed measurement method and conditions have been previously reported in detail [12]...

    Yudai Kamadaet al. Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With D...

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