A new approach to modeling statistical variations in MOS transistors
In this paper, a new methodology for modeling transistor mismatch in terms of systematic and random variations is proposed. The model is based on the variations in physical parameters. Although the methodology is the same, regardless of the technology used, the coefficients of the equations used in the model will vary due to the process. Results of the model, and a comparison between the proposed model and the well-known Pelgrom model is presented.