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ZnO as a dielectric for organic thin film transistor-based non-volatile memory

ZnO as a dielectric for organic thin film transistor-based non-volatile memory,10.1016/j.mee.2009.02.034,Microelectronic Engineering,N. Tjitra Salim,K

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ZnO as a dielectric for organic thin film transistor-based non-volatile memory   (Citations: 1)
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This paper demonstrates the novel application of d.c. sputtered zinc oxide (ZnO) as a charge trapping dielectric material for the application of an organic thin film transistor (OTFT) based non-volatile memory (NVM). The motivation of using ZnO as a dielectric is due to its chemical stability and optical transparency, enabling future development of transparent electronic devices. Unbalanced magnetron d.c. sputtering with Ar:O2 ratio of 80:20 was used to obtained a ZnO dielectric of 50nm thick. The ZnO has an optical band gap of 3.23eV, resistivity and k-value of 5×107Ω-cm and 50, respectively. The ZnO sandwiched between two layers of low-k methyl-silsesquioxane (MSQ) sol–gel dielectric creates a triple layer dielectric structure for charge storage. A solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene, was used as an active layer of an OTFT-NVM. It has been successfully demonstrated that this OTFT-NVM can be electrically programmed and erased at a low voltage.
Journal: Microelectronic Engineering - MICROELECTRON ENG , vol. 86, no. 10, pp. 2127-2131, 2009
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