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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m,10.1049/el:20090134,Electronics Letters,A. Ducanchez,L. Cerutti,P. Grech,F. Genty,E. T

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m


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Journal: Electronics Letters - ELECTRON LETT , vol. 45, no. 5, 2009

DOI: 10.1049/el:20090134

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Journal: Electronics Letters - ELECTRON LETT , vol. 44, no. 3, 2008


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