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Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate

Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate,10.1080/713718264,Integrated Ferroelectrics,Takeshi Masuda,Masahiko Kajinuma,Takakazu

Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate  
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Pb(Zr, Ti)O 3 (PZT) thin films were prepared on 8" φ ¯ substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of - 3% on 8" φ ¯ subatrate was achieved by optimizing the hardware construction (O 2 -Precursor mixing and gas flow control) and deposition parameters. Compositional uniformity was also improved by controlling temperature distribution on the substrate and choosing precursors which have the close decomposition temperature. For ferroelectric properties of MOCVD-PZT films on 8" φ ¯ substrate, 2Pr above 40 w C/cm 2 were obtained throughout their measurement points.
Journal: Integrated Ferroelectrics - INTEGR FERROELECTRICS , vol. 46, no. 1, pp. 65-77, 2002
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