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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.15ND0.85Ti3O12 THIN FILM DEPOSITED BY A SOL-GEL METHOD

FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.15ND0.85Ti3O12 THIN FILM DEPOSITED BY A SOL-GEL METHOD,10.1080/10584580601085693,Integrated Ferroelectrics,JU

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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.15ND0.85Ti3O12 THIN FILM DEPOSITED BY A SOL-GEL METHOD  
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Nd-substituted and Zr-substituted bismuth titanate BNT and BNTZx Bi3.15Nd0.85Ti3-xZrxO12(BNTZx, x = 0, 2%, 4%, 6%, 8%, 10%) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method at 750°C. XRD shows that A-site Nd and B-site Zr substitutions do not destroy the layered structure. The remanent polarization (2Pr) values under the voltage of 12v were 20.2, 22.5, 23.7, 26.4, 21.7 and 17.9 μ c/cm, respectively, for x = 0, 2%, 4%, 6%, 8%, 10%, with the BNTZ6 film has the maximum 2Pr value. While the BNTZx films had an coercive voltage (Vc) value of 3.5v which was similar to that of the BNT film. The fatigue date shows that the BNTZx films have an inferior fatigue characteristics than the BNT film.
Journal: Integrated Ferroelectrics - INTEGR FERROELECTRICS , vol. 85, no. 1, pp. 77-83, 2006
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