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Keywords
(6)
Figure of Merit
Low Frequency Noise
Phase Noise
Quality Factor
Radio Frequency
Voltage Controlled Oscillator
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Performance Consideration of MOS and Junction Diodes for Varactor Application
Performance Consideration of MOS and Junction Diodes for Varactor Application,10.1109/TED.2007.903201,IEEE Transactions on Electron Devices,Yi-Jen Cha
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Performance Consideration of MOS and Junction Diodes for Varactor Application
(
Citations: 6
)
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Yi-Jen Chan
,
Chi-Feng Huang
,
Chun-Chieh Wu
,
Chun-Hon Chen
,
Chih-Ping Chao
The engineering and tradeoffs for quality factor, capacitance tuning ratio, capacitance mismatch, and low- frequency noise for different varactor device structures, geometry sizes, and operations have been compared to provide a comprehensive guideline of an optimized structure for the advanced radio-frequency voltage-controlled oscillator (VCO). Compared with junction varactors, n+/n-well (NW) MOS varactors exhibit a higher capacitance tuning ratio (~3) and a superior capacitance mismatch (< 0.1% for a drawn size of 25 mum2). However, a noticeable low-frequency noise (~ 10-18 A2/Hz) was observed in the accumulation-mode n+/NW MOS varactors. A derived
figure of merit
in selecting a suitable varactor in terms of VCO's
phase noise
has been proposed for the first time. The measurement was performed by using the 0.18- mum 1P6M with AlCu backend wafer.
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 54, no. 9, pp. 2570-2573, 2007
DOI:
10.1109/TED.2007.903201
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Citation Context
(4)
...Those implemented by metal–oxide–silicon (MOS) capacitors (MOSVAR) or p–n junction diodes (JVAR) are usually by-product devices from a standard fabrication process, which is originally for CMOS transistors (Chan, Huang, Wu, Chen, and Chao
2007
)...
Margarita Marrero-Martin
,
et al.
Wide range fully integrated VCO with new cells-based varactor
...They can be divided in two main groups [
2
] : PN junction varactors [3] (JVARs) and MOS varactors [4] (MOSVARs), whose most important figures of merit are quality factor, Q, and tuning range, TR. JVARs exhibit higher quality factor [5] and easier voltage control, whereas tuning range is superior in MOSVARs...
M. Marrero-Martin
,
et al.
Circuit models for PN integrated varactors
...Many works concern quality factor or figure of merit of varactors [1,
2
] and but generally do not provide sufficient information to orientate the designers on the best choice...
Romain Debroucke
,
et al.
A high quality factor varactor technology evaluation
...Junction varactors exhibit higher Q-factor and easier voltage-control, whereas the tuning range, Cmax/Cmin, is superior in MOS varactors [
7
]...
M. Marrero-Martin
,
et al.
Capacitance estimation of PN varactors based on unit cells
References
(12)
Design of high-Q varactors for low-power wireless applications using a standard CMOS process
(
Citations: 92
)
A.-S. Porret
,
T. Melly
,
C. C. Enz
,
E. A. Vittoz
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 35, no. 3, pp. 337-345, 2000
Design issues in CMOS differential LC oscillators
(
Citations: 384
)
Ali Hajimiri
,
Thomas H. Lee
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 34, no. 5, pp. 717-724, 1999
On the use of MOS varactors in RF VCOs
(
Citations: 108
)
P. Andreani
,
S. Mattisson
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 35, no. 6, pp. 905-910, 2000
Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices
(
Citations: 10
)
R. Saletti
,
B. Neri
,
P. Olivo
,
A. Modelli
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 37, no. 11, pp. 2411-2413, 1990
The effect of varactor nonlinearity on the phase noise of completely integrated VCOs
(
Citations: 48
)
J. W. M. Rogers
,
J. A. Macedo
,
C. Plett
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 35, no. 9, pp. 1360-1367, 2000
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Citations
(6)
Wide range fully integrated VCO with new cells-based varactor
Margarita Marrero-Martin
,
Benito Gonzalez
,
Javier Garcia
,
Sunil L. Khemchandani
,
Antonio Hernandez
,
Javier del Pino
Journal:
International Journal of Electronics - INT J ELECTRON
, vol. ahead-of-p, no. ahead-of-p, pp. 1-14, 2012
Circuit models for PN integrated varactors
M. Marrero-Martin
,
J. Garcia
,
B. Gonzalez
,
A. Hernandez
Conference:
Spanish Conference on Electron Devices - CDE
, 2011
Capacitive model for integrated PN varactors of cells with N+ buried layer
(
Citations: 2
)
M. Marrero-Martín
,
J. García
,
B. González
,
A. Hernández
Journal:
International Journal of Numerical Modelling-electronic Networks Devices and Fields - INT J NUMER MODEL ELECTRON N
, vol. 23, no. 4-5, pp. 364-378, 2010
A high quality factor varactor technology evaluation
Romain Debroucke
,
Sebastien Jan
,
Jean-François Larchanché
,
Christophe Gaquière
Conference:
Radio Frequency Integrated Circuits IEEE Symposium - RFIC
, pp. 585-588, 2010
A systematic measurement technique to characterize bimodal oscillation for CMOS Quadrature LC-VCO
Shih-Chieh Shin
,
Sen-Wen Hsiao
,
John Chung-Hang Poh
,
Joy Laskar
Published in 2010.