Development of a Vertical Wrap-Gated InAs FET

Development of a Vertical Wrap-Gated InAs FET,10.1109/TED.2008.2005151,IEEE Transactions on Electron Devices,Claes Thelander,Carl Rehnstedt,Linus E. F

Development of a Vertical Wrap-Gated InAs FET   (Citations: 8)
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In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in situ doping, high- kappa dielectric deposition, spacer layer formation, and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 55, no. 11, pp. 3030-3036, 2008
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