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Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETs

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETs,10.1109/TED.2010.2041871

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETs   (Citations: 2)
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Random telegraph noise (RTN) in gate-induced drain leakage (GIDL) and gate edge direct tunneling (EDT) leakage currents under GIDL bias conditions were characterized in MOSFETs with a high-k gate dielectric for the first time. The RTNs were analyzed through systematic measurement and calculation. The results indicate that a high-current state in a GIDL current can be attributed to electron capture due to thermal emission. However, electron emission from a trap was mainly affected by gate bias. Both capture and emission times in the RTN of the EDT current had gate bias dependence. Moreover, multilevel RTN waveforms were detected in a device, and our analysis indicated that the multilevel RTN is the result of the combination of the RTNs of the GIDL and EDT currents. The analysis also indicated that two independent traps in the high- k gate dielectric can produce a four-level RTN in the GIDL current. This paper provides the fundamental physics required to understand such leakages in nanoscale MOSFETs and devices that utilize band-to-band tunneling.
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 57, no. 4, pp. 913-918, 2010
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    • ...Due to those reasons, there has been much recent interest regarding RTN in IGIDL [9]–[13]...
    • ...However, previous work extracting trap depths and energy levels has ignored the change in MOSFET surface potential that results from the trapping events that cause RTN [12], [13], and it is likely that such a simplified analysis will lead to a loss of accuracy in extracted trap depths and energy levels...
    • ...By applying the measurement result of IGIDL RTN to the proposed equation as well as to the conventional equation that ignores the effect of surface potential variation, we obtained the locations and energy levels of the trap, as shown in Fig. 6 [12], [13], [23]...

    Byoungchan Ohet al. Characterization of an Oxide Trap Leading to Random Telegraph Noise in...

    • ...Some approaches in analyzing the traps in the high-k dielectric are the low-frequency noise [1], [2] and random telegraph noise (RTN) measurements [3]–[8]...
    • ...Therefore, the RTN has been widely studied in several currents, such as drain current (Id) [3], [4], gate leakage current (Ig) [5]–[7], gate-induced drain leakage (GIDL) current [8], and gate edge direct tunneling (EDT) current [8]...
    • ...Therefore, the RTN has been widely studied in several currents, such as drain current (Id) [3], [4], gate leakage current (Ig) [5]–[7], gate-induced drain leakage (GIDL) current [8], and gate edge direct tunneling (EDT) current [8]...

    Heung-Jae Choet al. Investigation of Gate Etch Damage at Metal/High$k$ Gate Dielectric Sta...

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