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W-Band CMOS Amplifiers Achieving 10 dBm Saturated Output Power and 7.5 dB NF

W-Band CMOS Amplifiers Achieving 10 dBm Saturated Output Power and 7.5 dB NF,10.1109/JSSC.2009.2032274,IEEE Journal of Solid-state Circuits,Dan Sandst

W-Band CMOS Amplifiers Achieving 10 dBm Saturated Output Power and 7.5 dB NF   (Citations: 9)
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We present two W-band amplifiers, one implemented using conventional coplanar waveguides and unshielded passives and the other using slow-wave shielded waveguides and passives, realized in a 65-nm baseline CMOS technology. The measured results suggest that the slow-wave shielding of the passives is useful in achieving high performance and high frequency of operation. Our custom layout slotted plate capacitor employing slow-wave shield has low parasitic series resistance. Furthermore, as the substrate losses are minimal the modeling becomes more accurate. The measured based amplifier achieves +10 dBm output power at 100 GHz with a 1.2 V supply and 70 mA total DC-current consumption. The noise figure and gain at 100 GHz are 7.5 dB and 13 dB, respectively. The chip size of the implemented slow-wave amplifier is 0.33 mm2.
Journal: IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS , vol. 44, no. 12, pp. 3403-3409, 2009
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