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Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach

Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach,10.1109/TIA.2010.2045211,IEEE Transactions on Ind

Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach   (Citations: 1)
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The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.
Journal: IEEE Transactions on Industry Applications - IEEE TRANS IND APPL , vol. 46, no. 3, pp. 1144-1150, 2010
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    • ...Indeed, it has been shown in previous works that the thermalstep method [6-7], which is a temperature stimulus non destructive technique for measuring electric charge in insulators, is applicable to metal-oxide-semiconductor (MOS) structures [8] and can allow gathering further information on the oxide state when used complimentary to the capacitancevoltage technique [9]...
    • ...In a thermal-step measurement, a low temperature raise (several degrees) is applied to one side of the structure, placed at room temperature and biased under a voltage Vg [6- 9]. If the thermal step ΔT0 is applied to the Si (substrate) side, as shown in Fig. 2, the picoammeter measures a displacement current I(t) generated by the re-balacing of the gate influence...
    • ...The analysis of this current allows calculating the charge in the structure [9]...
    • ...In this hypothesis, the following expression can be drawn for the thermal-step current [9]:...
    • ...Using the expressions developed in [9], the following expression can be established for ΔVS:...
    • ...Calculations made using (9) and (10), the acquired data and the parameter values from [9] are presented in Table 1...

    Ludovic Boyeret al. Measurement of Charge Evolution in Oxides of DC Stressed MOS Structure...

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