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Dual-Bit Gate-Sidewall Storage FinFET NVM and New Method of Charge Detection

Dual-Bit Gate-Sidewall Storage FinFET NVM and New Method of Charge Detection,10.1109/LED.2007.896786,IEEE Electron Device Letters,Alvaro Padilla,Kyoun

Dual-Bit Gate-Sidewall Storage FinFET NVM and New Method of Charge Detection   (Citations: 2)
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A FinFET-based nonvolatile memory (NVM) cell design with two separate gate-sidewall charge-storage sites is presented for the first time. The conventional read method and/or a newly proposed read method can be used to identify the charge- storage state of each bit in the cell. The new read method allows the state of each bit to be determined by a forward read operation, and it is compatible with a gate-overlapped source/drain structure that offers improved ON-state conductance in contrast to the conventional read method. The dual-bit FinFET cell design can be used to achieve very high NVM storage density because of its high scalability and compatibility with standard CMOS process technology.
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 28, no. 6, pp. 502-505, 2007
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    • ...However, these structures still have problems to be solved, i.e., the stored charges next to the drain electrode affect the threshold voltage VT of the cell when the gate length is scaled down to well below 50 nm. To suppress these effects, a novel read method sensed by the band-to-band tunneling (BTBT) current enhanced by the locally stored charges [22] is considerable...
    • ...in Fig. 3, the programmed charges near the drain electrode enhance the transverse electric field resulting in enhanced GIDL current due to the BTBT process [22], [23]...

    Sunyeong Leeet al. A Novel Self-Aligned 4Bit SONOS-Type Nonvolatile Memory Cell With T-Ga...

    • ...The MILC-TFT with HfO2 gate dielectric can be used as OTP memories by measuring the change of gate-induced drain leakage (GIDL) current [9], [10]...
    • ...The memory states of MILC-TFT memory can be determined from the GIDL current under forward read operation [9], [10]...

    Tsung-Yu Chianget al. MILC-TFT With High Dielectrics for One-Time-Programmable Memory Applic...

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