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Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors

Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors,10.1109/LED.2010.2047237,IEEE Electron Device Letter

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Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors   (Citations: 1)
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Radiation hardness is tested for 4H-SiC n-p-n bipolar junction transistors designed for 1200-V breakdown voltage by implanting MeV protons and carbon ions at different doses and energies. The current gain is found to be a very sensitive parameter, and a fluence as low as 1 × 107 cm-2 of 10 MeV 12C can be clearly detected in the forward-output characteristics, IC(VCE) . At this low dose, no influence of ion radiation is seen in the open-collector characteristics, IB(VEB), or the reverse bias leakage and breakdown properties. Moreover, by annealing the implanted devices at 420°C for 30 min, a complete recovery of the electrical characteristics is accomplished.
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 31, no. 7, pp. 707-709, 2010
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