Academic
Publications
PCMO Device With High Switching Stability

PCMO Device With High Switching Stability,10.1109/LED.2010.2050457,IEEE Electron Device Letters,Yiran Chen,Wei Tian,Hai Li,Xiaobin Wang,Wenzhong Zhu

PCMO Device With High Switching Stability  
BibTex | RIS | RefWorks Download
We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3 (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5 × 103 programming cycles.
Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 31, no. 8, pp. 866-868, 2010
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.