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Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors,10.1109/LMWC.2010.2045597,IEEE Microwave and Wireless Components Letters,W. R.

Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors   (Citations: 14)
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W. R. Deal, X. B. Mei, V. Radisic, K. Leong, S. Sarkozy, B. Gorospe, J. Lee, P. H. Liu, W. Yoshida, J. Zhou, M. Lange, J. Uyedahttp://academic.research.microsoft.com/io.ashx?type=5&id=27098438&selfId1=0&selfId2=0&maxNumber=12&query=
In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated f MAX > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in coplanar waveguide, and uses monolithically integrated dipole probes to couple the chip from the WR 2.2 waveguide.
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    • ...HEMT based on InGaAs/InAlAs heterostructures with high indium (In) content in the electron transport channel are appropriate devices for high-frequency and ultra-low-noise applications [23]–[25]...

    Morteza Abbasiet al. Single-Chip 220GHz Active Heterodyne Receiver and Transmitter MMICs Wi...

    • ...Further improvements to this approach include the thinning of the substrate to 1 mil thickness, which has led to the first S-MMIC module operating at 480 GHz, shown in Fig. 25 [44], [45]...
    • ...Data points from Teledyne, NGC, Fraunhofer, HRL, NRAO, and JPL are indicated [4], [12], [29], [44]–[46], [49]–[62]...
    • ...[50]–[54]. HEMT results are found in [4], [19], [29], [44]–[46], [55], [56], and [59]–[61], having gate lengths of 30–50 nm. Exciting new resultsfrom aTeledyneInPDHBT TMICindicate11 dB noise figure at 300 GHz—the best reported noise figure for an HBT S-MMIC to date [12]...
    • ...Fig. 25. 480-GHz amplifier module with integrated dipole transition [44]...

    Lorene A. Samoska. An Overview of Solid-State Integrated Circuit Amplifiers in the Submil...

    • ...[1-5]. Other recent advances made in transistor device technologies have led to amplifier module results above 250 GHz [6-11]...

    Lorene Samoskaet al. On-wafer measurements of S-MMIC amplifiers from 400–500 GHz

    • ...Taking advantage of these record bandwidths, integrated circuits have recently been demonstrated in the submillimeter-wave and terahertz frequency bands (0.3–3 THz) [4]–[6], frequency regimes that were previously accessible only with two terminal devices such as Schottky diodes...

    Munkyo Seoet al. InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillato...

    • ...Recently, InP HEMT devices with a cutoff frequency of over 1 THz have been reported [26], [27] and demonstrated for amplifiers and other elementary components at up to around 500 GHz [42]–[44], and 10-Gb/s QPSK modulator and demodulator chip sets for a 120-GHz band have recently been demonstrated [45]...

    Ho-Jin Songet al. Present and Future of Terahertz Communications

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