Keywords (1)

Academic
Publications
PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT

PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT,10.1007/1-4020-4367-8_1,MASAAKI NIWA,RIICHIROU MIT

PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT   (Citations: 1)
BibTex | RIS | RefWorks Download
The electrical characteristics of high-k transistors using HfO2 and its silicate gate dielectrics are investigated. These dielectrics are formed by an oxidation of co-sputtered Hf (and Si), followed by nitridation in NH3 gas. In case of HfSiON gate dielectrics, due to its thermal robustness, lower gate leakage with good uniformity was achieved even after higher thermal treatment. Capacitance reduction due to its lower permittivity compared to HfO2 is compensated by introducing of Ni-FUSI electrode to reveal high on-state drive current. More highlighted is the effects of SiN capping between Ni-FUSI gate and PVD-high-k dielectric and post deposition annealing(PDA) to suppress the reaction during FUSI process. The SiN cap was found to increase the yield of transistors, however, it could not suppress the instability of drive current characteristic. The reason for this is considered to be due to the defects at the SiN capping layer caused by interfacial reaction during the NiSi formation. The electrical characteristics of high-k transistors using HfO and its
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
Sort by: