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Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs,10.1109/TED.2011.2118213,SungGeun Kim,Ab

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs   (Citations: 1)
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Published in 2011.
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    • ...Although ballistic electrons are expected to play an important role in the electrical performance of such ultrashort devices [8], [9], many other sources of scattering such as doping pockets [10], random impurities [11], remote Coulomb scattering [12]–[15], and spatial fluctuations due to surface roughness (SR) at the interfaces [16]–[25] can significantly affect the source-to-drain transport...

    Alessandro Crestiet al. A Comparative Study of Surface-Roughness-Induced Variability in Silico...

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