Angular distribution of particles sputtered from Si bottom in a CHFâ plasma,10.1116/1.2221323,Journal of Vacuum Science & Technology A,Jin-Kwan Lee,Gy

Angular distribution of particles sputtered from Si bottom in a CHFâ plasma (Citations: 4)


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The angular distribution (AD) of particles sputtered from a Si substrate in a CHFâ plasma at bias voltages between -200 and -400 V was investigated using a specially designed experimental setup for controlling the angle of incident ions on the substrate. Particles were sputtered from a primary target substrate, which was placed in a Faraday cage and on the horizontal cathode plane of a plasma etcher, by bombardment with ions incident in a direction normal to the substrate. The sputtered particles were redeposited on the surfaces of SiOâ secondary targets, which were fixed in small pieces at different positions on the convave surface of a circular sample holder, which was positioned above the primary target. A line connecting the primary and secondary targets defined the sputtering angle of the etch products. The redeposition rate was estimated from the difference in the thickness of the secondary target in two independent experiments, with and without the primary target. The redeposition rate was plotted as a function of sputtering angle and, the AD was then obtained from the plot. X-ray photoelectron spectroscopy analysis of a Si primary target subjected to etching indicated that a steady-state CFâ film with a thickness of about 50 A was formed on the Si at a bias voltage of -400 V. This film was thicker than the ion-energy transfer depth (30 A ), and, as a result, it can be concluded that particles redeposited on the secondary target were sputtered from a steady-state CFâ film that had been formed on the Si primary target. The AD of particles sputtered from the Si primary target showed an over-cosine dependence on the sputtering angle (Î¸), corresponding to cosÂ³â»â´ Î¸, and the power of the over-cosine dependence increased with bias voltage. The characteristic changes in the AD support the view that particles contributing to the redeposition were generated largely by physical sputtering rather than by ion-enhanced chemical etching.

Journal: Journal of Vacuum Science & Technology A - J VAC SCI TECHNOL A , vol. 24, no. 5, pp. 1807-1811, 2006

DOI: 10.1116/1.2221323

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Keywords (7)

Angular distribution of particles sputtered from Si bottom in a CHFâ plasma,10.1116/1.2221323,Journal of Vacuum Science & Technology A,Jin-Kwan Lee,Gy

References (19)

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Citations (4)

A nontransferring dry adhesive with hierarchical polymer nanohairs (Citations: 22)

Cyclic Deposition/Etching Process to Etch a Bowing-Free SiO[sub 2] Contact Hole (Citations: 1)

Oblique-Directional Plasma Etching of Si Using a Faraday Cage

Angular dependence of Si[sub 3]N[sub 4] etch rates and the etch selectivity of SiO[sub 2] to Si[sub 3]N[sub 4] at different bias voltages in a high-density C[sub 4]F[sub 8] plasma


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