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Prediction of dielectric reliability from IV characteristics: Poole-Frenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor

Prediction of dielectric reliability from IV characteristics: Poole-Frenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capa

Prediction of dielectric reliability from IV characteristics: Poole-Frenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor   (Citations: 15)
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Two assumptions lead to a correlation between the leakage mechanism of a dielectric and dielectric reliability: the degradation of the dielectric is a direct cause of the leakage current flowing through the dielectric and breakdown occurs after a critical charge has been forced through the dielectric. The field and temperature dependence of the leakage current mechanism then determine the voltage acceleration factor and the activation energy of TDDB experiments. This simple physical model describes the reliability of metal insulator metal (MIM) capacitors with PECVD SiN remarkably well. The current conduction mechanism is described by Poole–Frenkel theory, leading to a √E dependence of the time to breakdown on the applied electric field. The model predicts correctly the voltage acceleration factor and its temperature dependence and the activation energy.
Journal: Microelectronics Reliability , vol. 44, no. 3, pp. 411-423, 2004
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    • ...The median lifetime at the operating voltage is then projected by using a field acceleration model [22-24]...
    • ...Hence, it is important to characterize the current-voltage characteristics of the dielectric (Fig. 10), in order to determine an appropriate model for TDDB [23,24]...
    • ...SiN MIM capacitors, the activation energy for conduction is ~ 0.1 to 0.2 eV [23,24]...
    • ...During a constant voltage stress, there is typically an initial decrease in the leakage current, due to charge trapping in the dielectric, which reduces the electric field across the dielectric [24]...
    • ...The critical charge, QBD, is the integral of leakage current over time [24];...
    • ...To determine the CDF for a given use condition (i.e., voltage, temperature, capacitor area, and time), the characteristic lifetime is estimated by projecting from the stress conditions using an appropriate TDDB model [22-24]...
    • ...The projected failure rate at low field use conditions depends on the voltage acceleration model that is used [23,24]...
    • ...There are three different models that have been proposed to for dielectric breakdown, characterized by the dependence of lifetime on electric field; the E-model, the 1/E- model, and the square root E-model [22,24]...
    • ...There are a number of arguments for why the square root Emodel is appropriate for SiN dielectrics [24]...
    • ...This is consistent with what is observed on SiN MIM capacitors [24]...

    J. P. Gambinoet al. Interconnect processes and reliability for RF technology

    • ...Instead of the MTTF tests, the 1/f noise properties associated with the Pool Frenkel current through the MLCC could enough information of the intrinsic properties of the MLCC (4) . You can determine the dielectric constant and the Poole-Frenkel barrier height from the DC currents (5-12) , and the 1/f noise properties of the inherent component structure...

    M. Tacanoet al. Poole frenkel currents and 1/f noise characteristics of high voltage M...

    • ...It may be due to that high-k TaYOx contains initially a certain amount of neutral traps that capture charges during dielectric stress, which causes a reduction of the electric field across the dielectric and thus a reduction of the leakage current [7]...

    M. K. Hotaet al. Degradation behavior of TaYOx-based metal-insulator-metal capacitors

    • ...We obtained accelerated testing data from the work in [3-6]...

    Yao Wanget al. A novel virtual age reliability model for Time-to-Failure prediction

    • ...After reaching a peak value by ∼70 s, the leakage current decreases with the stress time as reported in [24]...

    E. B. Liaoet al. RF, DC, and Reliability Performance of MIM Capacitors Embedded in Orga...

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