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Keywords
(8)
Activation Energy
Electric Field
iv characteristic
Leakage Current
Physical Model
Silicon Nitride
Temperature Dependence
Metal Insulator Metal
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Prediction of dielectric reliability from IV characteristics: PooleFrenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor
Prediction of dielectric reliability from IV characteristics: PooleFrenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capa
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Prediction of dielectric reliability from IV characteristics: PooleFrenkel conduction mechanism leading to sqrt(E) model for silicon nitride MIM capacitor
(
Citations: 15
)
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K.H. Allers
Two assumptions lead to a correlation between the leakage mechanism of a dielectric and dielectric reliability: the degradation of the dielectric is a direct cause of the
leakage current
flowing through the dielectric and breakdown occurs after a critical charge has been forced through the dielectric. The field and
temperature dependence
of the
leakage current
mechanism then determine the voltage acceleration factor and the
activation energy
of TDDB experiments. This simple
physical model
describes the reliability of
metal insulator metal
(MIM) capacitors with PECVD SiN remarkably well. The current conduction mechanism is described by Poole–Frenkel theory, leading to a √E dependence of the time to breakdown on the applied electric field. The model predicts correctly the voltage acceleration factor and its
temperature dependence
and the activation energy.
Journal:
Microelectronics Reliability
, vol. 44, no. 3, pp. 411423, 2004
DOI:
10.1016/j.microrel.2003.12.007
Cumulative
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)
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www.informatik.unitrier.de
)
Citation Context
(7)
...The median lifetime at the operating voltage is then projected by using a field acceleration model [
2224
]...
...Hence, it is important to characterize the currentvoltage characteristics of the dielectric (Fig. 10), in order to determine an appropriate model for TDDB [23,
24
]...
...SiN MIM capacitors, the activation energy for conduction is ~ 0.1 to 0.2 eV [23,
24
]...
...During a constant voltage stress, there is typically an initial decrease in the leakage current, due to charge trapping in the dielectric, which reduces the electric field across the dielectric [
24
]...
...The critical charge, QBD, is the integral of leakage current over time [
24
];...
...To determine the CDF for a given use condition (i.e., voltage, temperature, capacitor area, and time), the characteristic lifetime is estimated by projecting from the stress conditions using an appropriate TDDB model [
2224
]...
...The projected failure rate at low field use conditions depends on the voltage acceleration model that is used [23,
24
]...
...There are three different models that have been proposed to for dielectric breakdown, characterized by the dependence of lifetime on electric field; the Emodel, the 1/E model, and the square root Emodel [22,
24
]...
...There are a number of arguments for why the square root Emodel is appropriate for SiN dielectrics [
24
]...
...This is consistent with what is observed on SiN MIM capacitors [
24
]...
J. P. Gambino
,
et al.
Interconnect processes and reliability for RF technology
...Instead of the MTTF tests, the 1/f noise properties associated with the Pool Frenkel current through the MLCC could enough information of the intrinsic properties of the MLCC (4) . You can determine the dielectric constant and the PooleFrenkel barrier height from the DC currents (
512
) , and the 1/f noise properties of the inherent component structure...
M. Tacano
,
et al.
Poole frenkel currents and 1/f noise characteristics of high voltage M...
...It may be due to that highk TaYOx contains initially a certain amount of neutral traps that capture charges during dielectric stress, which causes a reduction of the electric field across the dielectric and thus a reduction of the leakage current [
7
]...
M. K. Hota
,
et al.
Degradation behavior of TaYOxbased metalinsulatormetal capacitors
...We obtained accelerated testing data from the work in [
36
]...
Yao Wang
,
et al.
A novel virtual age reliability model for TimetoFailure prediction
...After reaching a peak value by ∼70 s, the leakage current decreases with the stress time as reported in [
24
]...
E. B. Liao
,
et al.
RF, DC, and Reliability Performance of MIM Capacitors Embedded in Orga...
References
(13)
Assessing the reliability of silicon nitride capacitors in a GaAs IC process
(
Citations: 16
)
Bob Yeats
Journal:
IEEE Transactions on Electron Devices  IEEE TRANS ELECTRON DEVICES
, vol. 45, no. 4, pp. 939946, 1998
Acceleration Factors for Thin Oxide Breakdown
(
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J. W. McPherson
Journal:
Journal of The Electrochemical Society  J ELECTROCHEM SOC
, vol. 132, no. 8, 1985
Percolation Models for Gate Oxide Breakdown
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J. H. Stathis
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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
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Robin Degraeve
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IEEE Transactions on Electron Devices  IEEE TRANS ELECTRON DEVICES
, vol. 45, no. 4, pp. 904911, 1998
Electrical breakdown in thin gate and tunneling oxides
(
Citations: 160
)
IhChin Chen
,
S. E. Holland
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Chenming Hu
Journal:
IEEE Transactions on Electron Devices  IEEE TRANS ELECTRON DEVICES
, vol. 32, no. 2, pp. 413422, 1985
Sort by:
Citations
(15)
Interconnect processes and reliability for RF technology
J. P. Gambino
,
F. Anderson
,
E. Cooney
,
J. He
,
R. Bolam
,
B. C. Webb
,
C. Cabral
,
T. Shaw
,
D. Vanslette
Conference:
International Symposium on Physical & Failure Analysis of Integrated Circuits  IPFA
, pp. 111, 2011
Poole frenkel currents and 1/f noise characteristics of high voltage MLCCs
M. Tacano
,
H. Ohya
,
N. Tanuma
,
Josef Sikula
Conference:
International Conference on Noise and Fluctuations  ICNF
, 2011
Atomic Layer Deposition and Characterization of Erbium OxideDoped Zirconium Oxide Thin Films
Aile Tamm
,
Marianna Kemell
,
Jekaterina Kozlova
,
Timo Sajavaara
,
Massimo Tallarida
,
Kaupo Kukli
,
Väino Sammelselg
,
Mikko Ritala
,
Markku Leskelä
Journal:
Journal of The Electrochemical Society  J ELECTROCHEM SOC
, vol. 157, no. 10, 2010
Degradation behavior of TaYOxbased metalinsulatormetal capacitors
M. K. Hota
,
C. Mahata
,
S. Mallik
,
C. K. Sarkar
,
C. K. Maiti
Conference:
International Symposium on Physical & Failure Analysis of Integrated Circuits  IPFA
, pp. 14, 2010
A novel virtual age reliability model for TimetoFailure prediction
Yao Wang
,
Sorin Cotofana
Conference:
IEEE International Integrated Reliability Workshop Final Report  IRW
, pp. 102105, 2010