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Field emission from a metal covered with a semiconducting layer: A model calculation

Field emission from a metal covered with a semiconducting layer: A model calculation,10.1007/BF00324502,Applied Physics A-materials Science & Processi

Field emission from a metal covered with a semiconducting layer: A model calculation  
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The electron field emission from a metal covered with a thin layer of a semiconductor with electron affinity ? and dielectric constant ? is considered. The model takes into account the metal-semiconductor (Schottky) barrier of height ?b, the conduction current inside the semiconductor, and the band bending at the semiconductor-vacuum interface due to the external field penetration. For thick films under moderately high electric fields, the metal-semiconductor interface does not influence the emission behaviour whereas for thin films, the interface plays an important role, depending on the barrier heights. In particular, for ?/?b2/3 the I–V characteristics will, for strong fields, be dominated by the field emission process at the interface. In such cases important deviations from Fowler-Nordheim behaviour are found.
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