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Experimental investigation of the effect of high-energy protons on charge-coupled devices

Experimental investigation of the effect of high-energy protons on charge-coupled devices,10.1134/S1063785010070084,Technical Physics Letters,K. N. Er

Experimental investigation of the effect of high-energy protons on charge-coupled devices  
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The effect of 1000-MeV protons on CCD matrix based image sensors, which are widely used in various equipment on-board space vehicles, have been studied in order to determine how the local structural damage of crystalline lattice caused by high-energy nuclear particles influences the parameters of CCD matrices. The dependence of the dark current of CCD matrices on the proton irradiation has been studied in a range of fluences up to 2 × 1011 cm−2.
Journal: Technical Physics Letters - TECH PHYS LETT , vol. 36, no. 7, pp. 610-612, 2010
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