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Athermal Resistance to Interface Motion in the Phase-Field Theory of Microstructure Evolution

Athermal Resistance to Interface Motion in the Phase-Field Theory of Microstructure Evolution,10.1103/PhysRevLett.99.245701,Physical Review Letters,Va

Athermal Resistance to Interface Motion in the Phase-Field Theory of Microstructure Evolution   (Citations: 5)
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A method of introducing an athermal resistance to interface propagation for the Ginzburg-Landau (GL) approach to the first-order phase transformations (PTs) is developed. It consists of introducing oscillating fields of stresses (due to various defects or a Peierls barrier) or a jump in chemical energy. It removes some essential drawbacks in GL modeling: it arrests experimentally observed microstructures that otherwise converge to a single phase, and it reproduces rate-independent stress hysteresis. A similar approach can be applied for twinning, dislocations, and other PTs (e.g., electric and magnetic).
Journal: Physical Review Letters - PHYS REV LETT , vol. 99, no. 24, 2007
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