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The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films,10.1007/s11434-011-4597-6,Chinese Science Bulletin,ZiGua

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films  
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The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for () reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×108 cm−2. GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.
Journal: Chinese Science Bulletin - CHIN SCI BULL , vol. 56, no. 25, pp. 2739-2743, 2011
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