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The performance improvement evaluation for SiGe-based IR detectors

The performance improvement evaluation for SiGe-based IR detectors,10.1016/j.sse.2011.01.010,Solid-state Electronics,M. Kolahdouz,A. Afshar Farniya,M.

The performance improvement evaluation for SiGe-based IR detectors   (Citations: 2)
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During recent years, single crystalline (Sc) SiGe has been recognized as a new low cost thermistor material for IR detection. In this study the effect of Ge content, pixel size and the Ni silicide on the performance of SiGe/Si thermistor material have been presented. The noise level was decreased for more than one order of magnitude when the Ni silicide layer was integrated below the metal contacts. The silicidation slightly improved TCR values for the detectors (+0.22%/K). However, increasing the Ge content had the most significant effect on the TCR. A statistical analysis was applied to evaluate the effect of each parameter. Using the factorial method, it was realized that decreasing the pixel size would enhance the TCR value.
Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 62, no. 1, pp. 72-76, 2011
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