Modeling of charge-trapping non-volatile-memories based on HfO 2
In the present work we present experimental results and the first simulation results concerning the charge-trapping properties of devices based on HfO2, MNOS-like, for non-volatile-memory applications. Hafnium oxide sputtered on top of a silicon dioxide tunneling layer represents the storage layer for the charges injected/extracted from the p-type silicon substrate. Although no blocking oxide on top of the structure has been considered in this study, electrical characterization shows large hysteresis at voltages lower than 12V. Insight to the physics underlying the behavior of such a device is given using a simulator presented in this work. The simulation of the programming characteristics will be presented and compared with those obtained from the fabricated devices giving insight to the properties of the traps involved. Good agreement is found between measured and simulated data.