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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy,10.1016/j.apsusc.2011.05.055,Applied Surface Science,Xu Pan,Xiaoliang Wa

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy  
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Al0.91Ga0.09N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0001) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al0.91Ga0.09N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (∼90meV) in Al0.91Ga0.09N. The formation of these localized states provides a favorable condition for efficient light emission.
Journal: Applied Surface Science - APPL SURF SCI , vol. 257, no. 20, pp. 8718-8721, 2011
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