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Top gate copper phthalocyanine thin film transistors with laser-printed dielectric

Top gate copper phthalocyanine thin film transistors with laser-printed dielectric,10.1016/j.synthmet.2011.02.017,Lancet,A. K. Diallo,L. Rapp,S. Nénon

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Top gate copper phthalocyanine thin film transistors with laser-printed dielectric  
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Dielectric layers involved in top gate organic thin film transistors (TG-OTFTs) have been fabricated by using laser induced forward transfer (LIFT) technique. Poly(methyl methacrylate) (PMMA) as insulating polymer was spin-coated on a quartz substrate and transferred by laser on an acceptor substrate to form a dielectric layer on top of an organic semiconducting layer and source/drain contacts both previously vapour phase deposited. Copper phthalocyanine (CuPc) has been chosen to form p-type organic active layers. The nature of transferred patterns and the efficiency of LIFT confirm the important potential of a laser printing technique in the development of plastic microelectronics. Electrical characterizations in TG configuration demonstrated that transistors are fully operative with hole mobility up to 8.6×10−3cm2/Vs. A comparative study with others dielectric layers in bottom gate transistors (BG-OTFTs), as PMMA spin-coated and silicon dioxide SiO2, points out more precisely the limiting parameters to an efficient charge transport in the conducting channel created at the interface between PMMA and CuPc.
Journal: Lancet , vol. 161, no. 9, pp. 888-893, 2011
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