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Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO 2 sensitized with Si nanocrystals

Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO 2 sensitized with Si nanocrystals,10.1016/j.optmat.2010.12.002,Optical Materials,D. Timmerma

Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO 2 sensitized with Si nanocrystals  
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In order to investigate origin of fast photoluminescence at 1.5μm reported to appear in Er-doped SiO2 sensitized with silicon nanocrystals, time-resolved photoluminescence measurements were compared between high temperature annealed Er-doped and Er-free samples. We confirm that this fast photoluminescence band observed in our materials is due to radiative recombination of Er3+ ions. At low temperatures, also a contribution from defect related-emission centered around 1300nm appears and adds up to the Er-related emission.
Journal: Optical Materials - OPT MATER , vol. 33, no. 7, pp. 1091-1093, 2011
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