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Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells

Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells,10.1016/j.egypro.2011.06.143,Energy Procedia,S. Gatz,K.

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Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells   (Citations: 2)
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In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet=600cm/s on 1.5Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a non-uniform back surface field and a Smet of 2000cm/s on the same material. We achieve an area-averaged rear surface recombination velocity Srear=(65±20) cm/s for line contacts with a pitch of 2mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2% with a Voc=655mV and a Jsc=38.4mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear=(70±30) cm/s which is in agreement with our lifetime results. Applying fine line screen-printing, efficiencies up to 19.4% are demonstrated.
Journal: Energy Procedia , vol. 8, pp. 318-323, 2011
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