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Keywords
(4)
Bipolar Transistor
Heterojunction Bipolar Transistor
High Performance
High Speed
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Highspeed Si heterobipolar transistor with a SiC widegap emitter and an ultrathin heavily doped photoepitaxially grown base
Highspeed Si heterobipolar transistor with a SiC widegap emitter and an ultrathin heavily doped photoepitaxially grown base,10.1109/BIPOL.1991.1609
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Highspeed Si heterobipolar transistor with a SiC widegap emitter and an ultrathin heavily doped photoepitaxially grown base
(
Citations: 2
)
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T. Yamazaki
,
I. Namura
,
T. Sugii
,
H. Goto
,
A. Tahara
,
T. Ito
The authors describe the AC performance of a Siheterojunction
bipolar transistor
using a SiC widegap emitter with a photoepitaxially grown heavily doped ultrathin base (SiCEBT). A 30GHz cutoff frequency and low base resistance were achieved, while retaining an acceptable current gain and preventing tunneling current. The DC characteristics of the SiCEBT were good enough to use in highperformance LSIs
Journal:
Neurocomputing  IJON
, 1991
DOI:
10.1109/BIPOL.1991.160959
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Citations
(2)
High frequency performance of SiC heterojunction bipolar transistors
(
Citations: 11
)
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,
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,
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