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High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base

High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base,10.1109/BIPOL.1991.1609

High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base   (Citations: 2)
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The authors describe the AC performance of a Si-heterojunction bipolar transistor using a SiC wide-gap emitter with a photoepitaxially grown heavily doped ultrathin base (SiC-EBT). A 30-GHz cutoff frequency and low base resistance were achieved, while retaining an acceptable current gain and preventing tunneling current. The DC characteristics of the SiC-EBT were good enough to use in high-performance LSIs
Journal: Neurocomputing - IJON , 1991
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