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A resonant pulse gate drive for high frequency applications

A resonant pulse gate drive for high frequency applications,10.1109/APEC.1992.228339,Herman L. N. Wiegman

A resonant pulse gate drive for high frequency applications   (Citations: 36)
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The analysis and implementation of a resonant pulse gate drive are discussed. The resonant gate drive is based on a simple charge pulse circuit which has conduction and logic losses. The pulse charging and discharging instances are controlled by the user, and hence this circuit is applicable to pulse width modulation (PWM) schemes as well as resonant converters. Theoretical analysis of the circuit shows its operation. Detailed equations are presented which describe the inherent losses of the circuit. Experimental results are shown to verify the operation and loss mechanisms
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    • ...The resonant gate drive proposed in [7], [8], [13], [14], and the CSDs in [25] and [26] have continuous inductor current...
    • ...2) Significant reduction of the switching transition time and switching loss: The disadvantages of the resonant gate drivers in [1], [8], [9], [12], and [15] are slow turn ON or turn OFF transition, which increases both conduction and switching losses in the power MOSFET due to the gate-drive current beginning at zero current...
    • ...5) High noise immunity: The disadvantage of the resonant gate drivers in [1], [8], [9], [12], [14], and [15] is the inability to actively clamp the power MOSFET gate to the drive voltage during the ON time and/or to ground during the OFF time, which can lead to undesired false triggering of the power MOSFET gate, i.e., lack of Cdv/dt immunity...

    Zhiliang Zhanget al. Discontinuous-Current-Source Drivers for High-Frequency Power MOSFETs

    • ...A gate drive unit (GDU) is generally used for power converters to operate the switching devices such as IGBT, MOS-FET and others [1-4]...

    Jun-ichi Itohet al. Experimental verification of a one-turn transformer power supply circu...

    • ...6) The inability to actively clamp the power MOSFET gate to the line during the on time and/or to ground during the off time, which can lead to undesired false triggering of the power MOSFET gate, i.e., lack of Cdv/dt immunity [14]–[21], [23]...

    Wilson Eberleet al. A Current Source Gate Driver Achieving Switching Loss Savings and Gate...

    • ...them suffer from at least one of the following driver specific problems: 1) only suitable for low-side and ground-referenced drives [18]‐[27]; 2) the leakage inductance with a bulky transformer or coupled inductance [24], [26], [28]‐[30]; 3) slow turn-on or turn-off transition times, which increase both conduction and switching losses in the power MOSFET due to the gate drive current beginning at zero current [18], [23]‐[26]; 4) the ...
    • ... 3) slow turn-on or turn-off transition times, which increase both conduction and switching losses in the power MOSFET due to the gate drive current beginning at zero current [18], [23]‐[26]; 4) the inability to actively clamp the power MOSFET gate to the drive voltage during the ON time and/or to ground during the OFF time, which can lead to undesired false triggering of the power MOSFET gate, i.e., lack of Cdv/dt immunity [18], [23]‐[28]...

    Zhiliang Zhanget al. A 1MHz High-Efficiency 12-V Buck Voltage Regulator With a New Current-...

    • ...The drivers proposed in [12]‐[20] all operate with low circulating current; however, they also operate with slow turn on and/or turn off since the inductor or transformer current begins to charge/discharge the MOSFET gate from zero...
    • ...However, the drivers proposed in [12]‐[14], [17], [19], and [20] do not clamp the power-MOSFET gate with a low-impedance switch, so the potential for Cdν/dt false triggering exists...

    Wilson Eberleet al. A New Resonant Gate-Drive Circuit With Efficient Energy Recovery and L...

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