Indium phosphide based micro optoelectro mechanics

Indium phosphide based micro optoelectro mechanics,10.1109/LEOSST.1996.540788,Klas Hjort,Klaus Streubel,P. Viktorovitch

Indium phosphide based micro optoelectro mechanics   (Citations: 3)
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In micro optoelectronical applications like lasers, photodiodes or phototransistors, III-V direct band-gap compounds are predominant. This should also be the case if micromechanics are integrated with active optoelectronic structures. Already much encouraging work has been made in GaAs based micro optoelectro mechanical systems (MOEMS). We propose that indium phosphide (InP) based surface micromachined micromechanics could also provide cost effective MOEMS, and for longer wavelengths. Application could be gas sensors, and in Fibre-to-the-House wavelength division multiplexing (WDM) 1.55 μm telecommunication systems
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