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Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates

Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates,10.1109/COMMAD.1996.610154,Y. Zhang,B. F. Usher,J. D. Riley,X. Huang,J

Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates  
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Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain in the epilayer. By relating X-ray measurements of distortion and misorientation of the epilayer unit cell to the defect structure at the ZnSe/GaAs interface, we are able to propose a model for the strain relaxation process in the ZnSe/GaAs system
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