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Process using TiSi2 as a shallow contact metallization

Process using TiSi2 as a shallow contact metallization,10.1109/SMICND.1997.651592,E. Manea,R. Divan,M. Stoica,S. Dunare

Process using TiSi2 as a shallow contact metallization  
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Because of its low resistivity and excellent thermal stability, TiSi2 is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi2 is explored with a X-ray powder diffractometer. TiSi2 is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure
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