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An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits

An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits,10.1109/VLSIT.2000.852823,Xiaodong Jin,Kanyu Cao,Jia-Jiunn Ou,We

An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits   (Citations: 1)
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An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement
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    • ...While the channel resistance is accounted for by using Non Quasi Static (NQS) models [2, 3], our study points to a high-frequency reduction in the resistive component of S11 prominent in devices with higher singlefinger W/L...
    • ...The existing NQS models [2, 3, 5] model the presence of an additional resistance that is a function of channel length and frequency...

    Tejasvi Daset al. Effects of Technology and Dimensional Scaling on Input Loss Prediction...

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