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Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions

Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions,10.1109/LEOSST.2002.1027606,

Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions  
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The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both theoretically and experimentally on different 850 nm VCSELs.
Conference: LEOS Summer Topical Meetings - IEEE/LEOS , pp. TuD3-25-TuD3-26, 2002
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