Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off,10.1109/HKEDM.2002.1029169,H. P. Ho,K

Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off


	BibTex \| RIS \| RefWorks Download

, , ,

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.

Conference: Proceedings IEEE Hong Kong Electron Devices Meeting - HKEDM , 2002

DOI: 10.1109/HKEDM.2002.1029169

Cumulative Annual

View Publication

( ieeexplore.ieee.org )

Keywords (8)

Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off,10.1109/HKEDM.2002.1029169,H. P. Ho,K

References (14)

Gestational Diabetes Mellitus (Citations: 67)

Gestational diabetes mellitus: prevalence, risk factors, maternal and infant outcomes (Citations: 63)

Standards of Medical Care in Diabetes—2008 (Citations: 1517)

Long-term Outcomes in Mothers Diagnosed With Gestational Diabetes Mellitus and Their Offspring (Citations: 20)

Metformin in Pregnancy: Its time has not yet come (Citations: 6)


	The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.