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Quantum surface potential model suitable for advanced MOSFETs simulation

Quantum surface potential model suitable for advanced MOSFETs simulation,10.1109/SISPAD.2003.1233678,F. Pregaldiny,Christophe Lallement,Daniel Mathiot

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Quantum surface potential model suitable for advanced MOSFETs simulation   (Citations: 1)
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An analytical solution physically accounting for the quantum mechanical effects within the context of an explicit surface-potential-based MOSFET model is presented. The quantum model does not need any additional parameter, and is fully dependent on all terminal voltages. It gives an accurate and continuous description of the surface potential and its derivatives in all regions of operation. The validity of our new modeling approach is confirmed by both comparisons with simulation data (obtained using self-consistent Schrodinger-Poisson numerical calculations) and experimental data from an advanced deep-submicron CMOS technology.
Conference: International Conference on Simulation of Semiconductor Processes and Devices - SISPAD , 2003
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