Academic
Publications
A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications

A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications,10.1109/IAS.2003.1257800,S. Buonomo,C. Ronsisvalle

A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications   (Citations: 11)
BibTex | RIS | RefWorks Download
In this paper a new family of devices, which is based on a bipolar-MOSFET cascode connection, is presented. The monolithic device is suitable for high-voltage applications. The basic features of this power device, the emitter-switching bipolar transistor (ESBT) component, are described both in terms of physical structure and electrical performances. The field of applications along with the driver requirement is discussed too. The advantages and drawbacks of the presented device in terms of both switching losses and base-gate command circuitry are compared with those of a MOSFET. Finally, the new device is tested by using as a workbench an actual off-line power supply (forward converter), in order to carry out useful information for the power converter designer about the switching behavior and the power losses.
Published in 2003.
Cumulative Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
    • ...The store d energy of the capacitor provides the positive base current for the following turn-on [7]...
    • ...A switching frequency above 100 kHz is published to be possible [7]...

    André Knopet al. Switching and conducting performance of SiC-JFET and ESBT against MOSF...

    • ...For the sake of comparison, the required blocking voltage (900 V) impedes the use of superjunction MOSFETs, and the switching frequency (130 kHz) and the forward voltage drop are more suitable for the cascode application than the IGBT application, as can be seen in [20]...
    • ...The power losses during the turn-on transient are strongly influenced by the dynamic voltage saturation VCS,SAT [20], [21]...

    Simone Buonomoet al. Driving a New Monolithic Cascode Device in a DC–DC Converter Applicati...

    • ...In recent years a new high voltage (up to 1700 V) monolithic cascode device has been introduced in the power switch scenario [1, 2]. The new devices show attractive dynamic characteristics and several interesting applications have been presented in literature [3, 4]. The cascode devices work in switching conditions through a peculiar technique (the open emitter turn off), and their forward conduction voltage is lower than the one of IGBT ...
    • ...The device is also named ESBT (emitter switching bipolar transistor) [3]...
    • ...As known, such a switching mechanism of the device increases the robustness against the reverse secondary breakdown [3]...
    • ...The emitter switching approach allows to design devices able to reach the switching frequency of 150 kHz with negligible trade off on the conduction losses [3]...

    F. Chimentoet al. Experimental Investigation of Monolithic Cascode Devices in Inverter L...

    • ...In details, they have a double nature being composed of a high-voltage bipolar device and a low-voltage power MOSFET [2]‐[4]...

    Rosario Pagano. Characterization, parameter identification, and modeling of a new mono...

    • ...The latter, recently available as a monolithic device, consists in the cascade connection of a high-voltage bipolar transistor and a low-voltage power MOSFET [1], [2]...

    S. Buonomoet al. Monolithic cascade device in low power converter applications with wid...

Sort by: