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A new edge termination technique for SiC power devices

A new edge termination technique for SiC power devices,10.1109/ISDRS.2003.1272024,Shuntao Hu,Kuang Sheng

A new edge termination technique for SiC power devices  
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In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
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