Temperature drift analysis in silicon micromachined piezoresistive accelerometer
Unlike in capacitive accelerometers, where the output voltage is less sensitive to temperature effects, but in piezoresistive accelerometers the output voltage varies considerably with respect to temperature. This paper presents temperature drift analysis of silicon micromachined piezoresistive accelerometer. The input range of the accelerometer is ±13 g and this device finds application in aircraft motion sensing. The temperature drift analysis of the device is simulated using MemPZR module of CoventorWare 2003.1 and the simulation results are presented.