Lateral integration of partially insulated and bulk MOSFETs using partial SOI process
Sung Hwan Kim, Chang Woo Oh, Kyoung Hwan Yeo, Dong Uk Choi, Min Sang Kim, Sung Min Kim, Jeong Dong Choe, Jeongnam Han, Young-Pil Kim, Dong-Won Kim, Byung-Il Ryu
We proposed and successfully demonstrated partially insulated and bulk MOSFETs with multiple Vths, Ions, and IOffs by using partial SOI process without complex process and SOI wafer. Both nMOS and pMOS applicable to the HP and LSTP transistors were simultaneously implemented on the same wafer with the same process except partial SOI process. These results must be very useful to implement IC systems requiring various specifications of VTHs, IOns, and IOffs.