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SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD

SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD,10.1109/GROUP4.2008.4638086,G. Isella,G. Matmon,A. Neels,E. Muller,M. C

SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD  
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Si0.5Ge0.5/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.
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