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InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability,10.1109/ICIPRM.2008.4702965,Mourad Chtioui,Alain Enard,Daniele Carpentier,Steph

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InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability   (Citations: 1)
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We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz at 70 mA.
Conference: Indium Phosphide and Related Materials Conference - CSW/IPRM , pp. 1-4, 2008
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    • ...To reduce this effect and enhance the maximal handling photocurrent, the first design consideration is to optimize the PD structure in order to reduce the series resistance [7]...
    • ...The electrical field EC in the collector layer [7] depends, in part, on the effective operational voltage applied to the PD junction...
    • ...The choice of materials with a better thermal conductivity, such as InP compared to GaInAs and GaInAsP, in the PD structure leads to a better heat dissipation [7]...

    M. Chtioui, et al. High power UTC photodiodes design and application for analog fiber opt...

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