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Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures

Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures,10.1109/DRC.2008.4800848,C. W. Tu,V. A. Odnoblyudov,J. Chami

Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures  
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In this paper GaNP/GaP LED structures are much simpler to grow than conventional process, chip processing uses existing technology, and GaNP/GaP LEDs exhibit only a small wavelength shift with injection current. With increasing temperature, the electroluminescence (EL) intensity decreases. Thus, GaNP/GaP LEDs are in the process of being commercialized.
Conference: Device Research Conference - DRC , pp. 299-300, 2008
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