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Characterization of polySilicon emitter BJTs as access devices for Phase Change Memory

Characterization of polySilicon emitter BJTs as access devices for Phase Change Memory,10.1109/VTSA.2009.5159278,B. Rajendran,M. Breitwisch,R. Cheek,M

Characterization of polySilicon emitter BJTs as access devices for Phase Change Memory   (Citations: 3)
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We demonstrate poly-silicon emitter vertical PNP bipolar junction transistors (BJTs) that could be used as access devices for phase change memory. The device arrays fabricated using a 180 nm BiCMOS process exhibit current drive capability in excess of 10 mA/mum2, on-off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density phase change memory technology.
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