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Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB),10.1109/IPFA.2009.5232553,Je

Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)   (Citations: 3)
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Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.
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