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Dark current mechanisms in InxGa1-xAs1-yNy

Dark current mechanisms in InxGa1-xAs1-yNy,10.1109/LEOS.2009.5343290,L. J. J. Tan,W. S. Soong,S. L. Tan,Y. L. Goh,M. J. Steer,J. S. Ng,J. P. R. David,

Dark current mechanisms in InxGa1-xAs1-yNy  
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In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.
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