Keywords (4)

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition,10.1109/ISDRS.2009.5378255,Si-Young Pa

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition


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For the first time, CVD-grown Si only backward diode detectors incorporating δ-doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 kΩ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area focal plane arrays with low cost is now possible.

Conference: Semiconductor Device Research International Symposium - ISDRS , 2009

DOI: 10.1109/ISDRS.2009.5378255

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Keywords (4)

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition,10.1109/ISDRS.2009.5378255,Si-Young Pa

References (4)

Backward Diodes for Low-level Millimeter-Wave Detection (Citations: 17)

High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection (Citations: 15)

Sensitivity of Si-based zero-bias backward diodes for microwave detection (Citations: 3)

Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology (Citations: 4)


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