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Keywords
(4)
High Performance
Low Power
Field Effect Transistor
Quantum Well
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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low pow
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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
(
Citations: 15
)
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M. Radosavljevic
,
B. Chu-Kung
,
S. Corcoran
,
G. Dewey
,
M. K. Hudait
,
J. M. Fastenau
,
J. Kavalieros
,
W. K. Liu
,
D. Lubyshev
,
M. Metz
,
K. Millard
,
N. Mukherjee
http://academic.research.microsoft.com/io.ashx?type=5&id=50862396&selfId1=0&selfId2=0&maxNumber=12&query=
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well
field effect transistor
(QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel. The LG=75nm In0.7Ga0.3As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750¿S/¿m and high drive current of 0.49mA/¿m at VDS=0.5V.
Conference:
International Electron Devices Meeting - IEDM
, 2009
DOI:
10.1109/IEDM.2009.5424361
Cumulative
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(
ieeexplore.ieee.org
)
Citation Context
(11)
...Digital Object Identifier 10.1109/TED.2011.2144986 reach of Si CMOS technology [2]–[
8
]...
...In particular, InGaAs and InAs channel QWFETs scaled down to 30 nm gate lengths have been shown to exhibit superior performance compared to Si MOSFETs and their heterogeneous integration on Si substrate has already been demonstrated [3]–[
8
]...
Neerav Kharche
,
et al.
Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Wel...
...It is now anticipated that III‐V MOSFETs may allow higher drive current and transconductance than silicon at its low-power scaling limit [
4
], making them an attractive n-channel solution...
...Conversely, much work has also been undertaken on the development of buried-channel quantum-well nMOSFETs, but their scaling potential remains unclear as a consequence of the inclusion of wide-bandgap layers above the channel [
4
], [6]...
Steven J. Bentley
,
et al.
Electron Mobility in Surface and Buried-Channel Flatband $\hbox{In}_{0...
...III-V metal‐oxide‐semiconductor field-effect transistors (MOSFETs) using high- gate dielectric are therefore being developed, already showing high of 1.75 mS/ m at a gate length of nm for an In Ga As field-effect transistor (FET) [
3
] with TaSiO high- dielectric...
Sofia Johansson
,
et al.
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors In...
...The RSD is higher than that of a HEMT structure as reported in [
5
]...
Hock-Chun Chin
,
et al.
III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox...
...Although alternative channel materials with a mobility higher than in Si were already investigated [
3
], [4], it is believed that Si will still be the main channel material for MOSFETs beyond the 22-nm technology node...
Oskar Baumgartner
,
et al.
Perspectives of Silicon for Future Spintronic Applications From the Pe...
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Citations
(15)
Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
(
Citations: 1
)
Neerav Kharche
,
Gerhard Klimeck
,
Dae-Hyun Kim
,
Jesús A. del Alamo
,
Mathieu Luisier
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 7, pp. 1963-1971, 2011
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
Ashkar Ali
,
Himanshu Madan
,
Ashish Agrawal
,
Israel Ramirez
,
Rajiv Misra
,
J. Brad Boos
,
Brian R. Bennett
,
Jeff Lindemuth
,
Suman Datta
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 12, pp. 1689-1691, 2011
Electron Mobility in Surface and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
Steven J. Bentley
,
Martin Holland
,
Xu Li
,
Gary W. Paterson
,
Haiping Zhou
,
Olesya Ignatova
,
Douglas Macintyre
,
Stephen Thoms
,
Asen Asenov
,
Byungha Shin
,
Jaesoo Ahn
,
Paul C. McIntyre
http://academic.research.microsoft.com/io.ashx?type=5&id=51178659&selfId1=0&selfId2=0&maxNumber=12&query=
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 4, pp. 494-496, 2011
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Sofia Johansson
,
Mikael Egard
,
Sepideh Gorji Ghalamestani
,
B. Mattias Borg
,
Martin Berg
,
Lars-Erik Wernersson
,
Erik Lind
Journal:
IEEE Transactions on Microwave Theory and Techniques - IEEE TRANS MICROWAVE THEORY
, vol. 59, no. 10, pp. 2733-2738, 2011
III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin
Hock-Chun Chin
,
Xiao Gong
,
Lanxiang Wang
,
Hock Koon Lee
,
Luping Shi
,
Yee-Chia Yeo
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 2, pp. 146-148, 2011